Different luminescent properties of C^+-implanted SiO~2 films grown by thermal oxidation and PECVD: Fid-Bau Portal

Different luminescent properties of C^+-implanted SiO~2 films grown by thermal oxidation and PECVD

Zhao, J. / Mao, D. S. / Lin, Z. X. / Jiang, B. Y. / Yu, Y. H. / Liu, X. H. / Yang, G. Q.

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Different luminescent properties of C^+-implanted SiO~2 films grown by thermal oxidation and PECVD

Zhao, J. / Mao, D. S. / Lin, Z. X. / Jiang, B. Y. / Yu, Y. H. / Liu, X. H. / Yang, G. Q.

Different luminescent properties of C^+-implanted SiO~2 films grown by thermal oxidation and PECVD

Zhao, J. / Mao, D. S. / Lin, Z. X. / Jiang, B. Y. / Yu, Y. H. / Liu, X. H. / Yang, G. Q.

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Title:

Different luminescent properties of C^+-implanted SiO~2 films grown by thermal oxidation and PECVD

Contributors:

Zhao, J. (author) / Mao, D. S. (author) / Lin, Z. X. (author) / Jiang, B. Y. (author) / Yu, Y. H. (author) / Liu, X. H. (author) / Yang, G. Q. (author)

Published in:

MATERIALS LETTERS ; 38 ; 321-325

Publication date:

1999-01-01

Size:

5 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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