Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia: Fid-Bau Portal

Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia

Bagatur`yants, A. A. / Novoselov, K. P. / Safonov, A. A. / Savchenko, L. L. / Cole, J. V. / Korkin, A. A.

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Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia

Bagatur`yants, A. A. / Novoselov, K. P. / Safonov, A. A. / Savchenko, L. L. / Cole, J. V. / Korkin, A. A.

Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia

Bagatur`yants, A. A. / Novoselov, K. P. / Safonov, A. A. / Savchenko, L. L. / Cole, J. V. / Korkin, A. A.

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Title:

Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia

Contributors:

Bagatur`yants, A. A. (author) / Novoselov, K. P. (author) / Safonov, A. A. (author) / Savchenko, L. L. (author) / Cole, J. V. (author) / Korkin, A. A. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 23-29

Publication date:

2000-01-01

Size:

7 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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