Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions: Fid-Bau Portal

Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions

Whelan, S. / Armour, D. G. / Van den Berg, J. A. / Goldberg, R. D. / Zhang, S. / Bailey, P. / Noakes, T. C.

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Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions

Whelan, S. / Armour, D. G. / Van den Berg, J. A. / Goldberg, R. D. / Zhang, S. / Bailey, P. / Noakes, T. C.

Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions

Whelan, S. / Armour, D. G. / Van den Berg, J. A. / Goldberg, R. D. / Zhang, S. / Bailey, P. / Noakes, T. C.

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Check availability in my library

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Document information

Title:

Implant temperature dependence of transient-enhanced diffusion in silicon (100) implanted with low-energy arsenic ions

Contributors:

Whelan, S. (author) / Armour, D. G. (author) / Van den Berg, J. A. (author) / Goldberg, R. D. (author) / Zhang, S. (author) / Bailey, P. (author) / Noakes, T. C. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 3 ; 285-290

Publication date:

2000-01-01

Size:

6 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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