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Tantalum diffusion barrier grown by inorganic plasma-promoted chemical vapor deposition: Performance in copper metallization

Kaloyeros, A. E. / Chen, X. / Lane, S. / Frisch, H. L. / Arkles, B.

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Tantalum diffusion barrier grown by inorganic plasma-promoted chemical vapor deposition: Performance in copper metallization

Kaloyeros, A. E. / Chen, X. / Lane, S. / Frisch, H. L. / Arkles, B.

Tantalum diffusion barrier grown by inorganic plasma-promoted chemical vapor deposition: Performance in copper metallization

Kaloyeros, A. E. / Chen, X. / Lane, S. / Frisch, H. L. / Arkles, B.

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Check availability in my library

Order at Subito €

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Document information

Title:

Tantalum diffusion barrier grown by inorganic plasma-promoted chemical vapor deposition: Performance in copper metallization

Contributors:

Kaloyeros, A. E. (author) / Chen, X. (author) / Lane, S. (author) / Frisch, H. L. (author) / Arkles, B. (author)

Published in:

JOURNAL OF MATERIALS RESEARCH -PITTSBURGH- ; 15 ; 2800-2810

Publication date:

2000-01-01

Size:

11 pages

ISSN:

0884-2914

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Chen, X. / Peterson, G. G. / Goldberg, C. et al. | British Library Online Contents | 1999

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A new metal-organic chemical vapor deposition process for selective copper metallization

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