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Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technology

Pereira, M. A. / Diniz, J. A. / Doi, I. / Swart, J. W.

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Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technology

Pereira, M. A. / Diniz, J. A. / Doi, I. / Swart, J. W.

Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technology

Pereira, M. A. / Diniz, J. A. / Doi, I. / Swart, J. W.

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Check availability in my library

Order at Subito €

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Document information

Title:

Silicon nitride deposited by ECR-CVD at room temperature for LOCOS isolation technology

Contributors:

Pereira, M. A. (author) / Diniz, J. A. (author) / Doi, I. (author) / Swart, J. W. (author)

Published in:

APPLIED SURFACE SCIENCE ; 212-213 ; 388-392

Publication date:

2003-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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