A platform for research: civil engineering, architecture and urbanism
Reactive Ion Etching Induced Surface Damage of Silicon Carbide
Reactive Ion Etching Induced Surface Damage of Silicon Carbide
Reactive Ion Etching Induced Surface Damage of Silicon Carbide
Xia, J. H. (author) / Rusli (author) / Gopalakrishan, R. (author) / Choy, S. F. (author) / Tin, C. C. (author) / Ahn, J. (author) / Yoon, S. F. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Reactive Ion Etching of Silicon Carbide with Patterned Boron Implantation
British Library Online Contents | 2004
|METHOD FOR MANUFACTURING SILICON CARBIDE CARRIER FOR PLASMA ETCHING AND SILICON CARBIDE CARRIER
European Patent Office | 2023
|Surface modification method of reactive sintering silicon carbide product
European Patent Office | 2022
|4H Silicon Carbide Etching Using Chlorine Trifluoride Gas
British Library Online Contents | 2009
|Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers
British Library Online Contents | 2000
|