Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si~1~-~xGe~x S/D p-MOSFETs: Fid-Bau Portal

Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si~1~-~xGe~x S/D p-MOSFETs

Nakashima, T. / Idemoto, T. / Tsunoda, I. / Takakura, K. / Yoneoka, M. / Ohyama, H. / Yoshino, K. / Simoen, E. / Claeys, C.

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Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si~1~-~xGe~x S/D p-MOSFETs

Nakashima, T. / Idemoto, T. / Tsunoda, I. / Takakura, K. / Yoneoka, M. / Ohyama, H. / Yoshino, K. / Simoen, E. / Claeys, C.

Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si~1~-~xGe~x S/D p-MOSFETs

Nakashima, T. / Idemoto, T. / Tsunoda, I. / Takakura, K. / Yoneoka, M. / Ohyama, H. / Yoshino, K. / Simoen, E. / Claeys, C.

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Title:

Gate-Length Dependent Radiation Damage in 2-MeV Electron-Irradiated Si~1~-~xGe~x S/D p-MOSFETs

Contributors:

Nakashima, T. (author) / Idemoto, T. (author) / Tsunoda, I. (author) / Takakura, K. (author) / Yoneoka, M. (author) / Ohyama, H. (author) / Yoshino, K. (author) / Simoen, E. (author) / Claeys, C. (author) / Yamada-Kaneta, H.

Published in:

Defects-Recognition, Imaging and Physics in Semiconductors XIV ; 235-238

MATERIALS SCIENCE FORUM ; 725

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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