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Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

Ma, X. / Liu, W. / Chen, C. / Du, X. / Liu, X. / Song, Z. / Lin, C.

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Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

Ma, X. / Liu, W. / Chen, C. / Du, X. / Liu, X. / Song, Z. / Lin, C.

Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

Ma, X. / Liu, W. / Chen, C. / Du, X. / Liu, X. / Song, Z. / Lin, C.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

Title:

Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

Contributors:

Ma, X. (author) / Liu, W. (author) / Chen, C. (author) / Du, X. (author) / Liu, X. (author) / Song, Z. (author) / Lin, C. (author)

Published in:

APPLIED SURFACE SCIENCE ; 255 ; 7743-7748

Publication date:

2009-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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