Structural and dielectric properties of Ti and Er co-doped HfO2 gate dielectrics grown by RF sputtering: Fid-Bau Portal

Structural and dielectric properties of Ti and Er co-doped HfO2 gate dielectrics grown by RF sputtering

Khaskheli, M. A. / Wu, P. / Chand, R. / Li, X. / Wang, H. / Zhang, S. / Chen, S. / Pei, Y.

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Structural and dielectric properties of Ti and Er co-doped HfO2 gate dielectrics grown by RF sputtering

Khaskheli, M. A. / Wu, P. / Chand, R. / Li, X. / Wang, H. / Zhang, S. / Chen, S. / Pei, Y.

Structural and dielectric properties of Ti and Er co-doped HfO2 gate dielectrics grown by RF sputtering

Khaskheli, M. A. / Wu, P. / Chand, R. / Li, X. / Wang, H. / Zhang, S. / Chen, S. / Pei, Y.

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Title:

Structural and dielectric properties of Ti and Er co-doped HfO2 gate dielectrics grown by RF sputtering

Contributors:

Khaskheli, M. A. (author) / Wu, P. (author) / Chand, R. (author) / Li, X. (author) / Wang, H. (author) / Zhang, S. (author) / Chen, S. (author) / Pei, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 266 ; 355-359

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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