Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone: Fid-Bau Portal

Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone

Xu, R. / Tao, Q. / Yang, Y. / Takoudis, C. G.

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Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone

Xu, R. / Tao, Q. / Yang, Y. / Takoudis, C. G.

Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone

Xu, R. / Tao, Q. / Yang, Y. / Takoudis, C. G.

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Check availability in my library

Order at Subito €

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Document information

Title:

Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone

Contributors:

Xu, R. (author) / Tao, Q. (author) / Yang, Y. (author) / Takoudis, C. G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 258 ; 8514-8520

Publication date:

2012-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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