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Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone
Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone
Atomic layer deposition and characterization of stoichiometric erbium oxide thin dielectrics on Si(100) using (CpMe)3Er precursor and ozone
Xu, R. (author) / Tao, Q. (author) / Yang, Y. (author) / Takoudis, C. G. (author)
APPLIED SURFACE SCIENCE ; 258 ; 8514-8520
2012-01-01
7 pages
Article (Journal)
English
DDC:
621.35
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