Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(001) for high-power MOSFET applications: Fid-Bau Portal

Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(001) for high-power MOSFET applications

Anzalone, R. / Privitera, S. / Camarda, M. / Alberti, A. / Mannino, G. / Fiorenza, P. / Di Franco, S. / La Via, F.

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Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(001) for high-power MOSFET applications

Anzalone, R. / Privitera, S. / Camarda, M. / Alberti, A. / Mannino, G. / Fiorenza, P. / Di Franco, S. / La Via, F.

Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(001) for high-power MOSFET applications

Anzalone, R. / Privitera, S. / Camarda, M. / Alberti, A. / Mannino, G. / Fiorenza, P. / Di Franco, S. / La Via, F.

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Check availability in my library

Order at Subito €

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Document information

Title:

Interface state density evaluation of high quality hetero-epitaxial 3C-SiC(001) for high-power MOSFET applications

Contributors:

Anzalone, R. (author) / Privitera, S. (author) / Camarda, M. (author) / Alberti, A. (author) / Mannino, G. (author) / Fiorenza, P. (author) / Di Franco, S. (author) / La Via, F. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 198 ; 14-19

Publication date:

2015-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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